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| ISSUED DATE :2005/08/31 REVISED DATE : GSM BT 8050 Description Package Dimensions NP N E PITAXI AL T RANSI STOR The GSMBT8050 is designed for general purpose amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD ,unless otherwise noted) Max. 1 100 500 1 500 10 MHz pF Unit V V V uA nA mV V IC=10uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 IC=500mA, IB=50mA VCE=1V, IC=150mA VCE=1V, IC=150mA VCE=10V, IC=20mA, f=100MHz VCB=10V, f=1MHz Test Conditions Ratings +150 -55~+150 25 20 5 700 225 Unit V V V mA mW Electrical Characteristics(Ta = 25 : Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(on) hFE fT Cob Min. 25 20 5 120 150 Typ. - Classification Of hFE Rank Range D9C 120 ~ 200 D9D 150 ~ 300 D9E 250 ~ 500 GSMBT8050 Page: 1/2 ISSUED DATE :2005/08/31 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSMBT8050 Page: 2/2 |
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